Cooling of suspended nanostructures with tunnel junctions

We have investigated electronic cooling of suspended nanowires with SINIS tunnel junction coolers. The suspended samples consist of a free standing nanowire suspended by four narrow ($\sim$ 200 nm) bridges. We have compared two different cooler designs for cooling the suspended nanowire. We demonstrate that cooling of the nanowire is possible with a proper SINIS cooler design

Electronic cooling of a submicron-sized metallic beam

We demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by developing a simple fabrication method for reliably releasing narrow submicron sized metal beams. The process is based on reactive ion etching and uses a conducting substrate to avoid charge-up damage and is compatible with e.g. conventional e-beam lithography, shadow-angle metal deposition and oxide tunnel junctions. The devices function well and exhibit clear cooling; up to factor of two at sub-kelvin temperatures.Comment: 4 pages, 3 figure

Magnetic-field-induced stabilization of nonequilibrium superconductivity in a normal-metal/insulator/superconductor junction

A small magnetic field is found to enhance relaxation processes in a superconductor, thus stabilizing superconductivity in nonequilibrium conditions. In a normal-metal (N)/insulator/superconductor (S) tunnel junction, applying a field of the order of 100μT leads to significantly improved cooling of the N island by quasiparticle (QP) tunneling. These findings are attributed to faster QP relaxation within the S electrodes as a result of enhanced QP drain through regions with a locally suppressed energy gap due to magnetic vortices in the S leads at some distance from the junction.Peer reviewe

Excitation of Single Quasiparticles in a Small Superconducting Al Island Connected to Normal-Metal Leads by Tunnel Junctions

We investigate the dynamics of individual quasiparticle excitations on a small superconducting aluminum island connected to normal metallic leads by tunnel junctions. We find the island to be free of excitations within the measurement resolution. This allows us to show that the residual heating, which typically limits experiments on superconductors, has an ultralow value of less than 0.1 aW. By injecting electrons with a periodic gate voltage, we probe electron-phonon interaction and relaxation down to a single quasiparticle excitation pair, with a measured recombination rate of 16 kHz. Our experiment yields a strong test of BCS theory in aluminum as the results are consistent with it without free parameters.Peer reviewe

Trapping hot quasi-particles in a high-power superconducting electronic cooler

The performance of hybrid superconducting electronic coolers is usually limited by the accumulation of hot quasi-particles in their superconducting leads. This issue is all the more stringent in large-scale and high-power devices, as required by the applications. Introducing a metallic drain connected to the superconducting electrodes via a fine-tuned tunnel barrier, we efficiently remove quasi-particles and obtain electronic cooling from 300 mK down to 130 mK with a 400 pW cooling power. A simple thermal model accounts for the experimental observations.Peer reviewe

An addressable quantum dot qubit with fault-tolerant control fidelity

Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has orders of magnitude improved coherence times compared with other quantum dot qubits, with T_2* = 120 mus and T_2 = 28 ms. By gate-voltage tuning of the electron g*-factor, we can Stark shift the electron spin resonance (ESR) frequency by more than 3000 times the 2.4 kHz ESR linewidth, providing a direct path to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies

Radio frequency measurements of tunnel couplings and singlet–triplet spin states in Si:P quantum dots

Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet–triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μeV to 8 meV. We measure dot–lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon